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First reported by EE Times Asia
Breakthrough Packaging Enhances Power Density in AOS’s Latest MOSFETs

Stacked-die half-bridge boosts MOSFET power density

Susan Nordyk3h agoen
Read on edn.com

From the article

Using a vertically stacked-die design, AOS's DFN6×5 AmpStack package integrates two MOSFETs configured as a high-side/low-side half-bridge. The post Stacked-die half-bridge boosts MOSFET power density appeared first on EDN .
Continue reading on EDN

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