Multi-gate ferroelectric transistor based on CuInP2S6/MoS2 heterojunctions integrates digital and analog functions
By
Jiewei Chen3,10 Send email to [email protected]
Summary
This article presents a research breakthrough in two-dimensional ferroelectric van der Waals heterojunctions, specifically a multi-gate asymmetric ferroelectric field-effect transistor (AFe-FET) based on CuInP2S6/MoS2 heterostructures. The device achieves high performance metrics including an on/off ratio of 10^6, subthreshold swing of 45.1 mV/dec, and low leakage current down to 10^-11 A. It successfully integrates digital and analog functions—transistor, rectifier, memory, and logic—in a single device through synergistic polarization control, offering a pathway to compact, multifunctional, low-power electronics with applications in neural computing.
Source
bskyMulti-gate ferroelectric transistor based on CuInP2S6/MoS2 heterojunctions integrates digital and analog functionscell.comKey quotes
· 3 pulledTwo-dimensional ferroelectric van der Waals heterojunctions hold promise for high-density, low-power electronic devices, yet integrating digital and analog functions in a single device remains challenging.
The device achieves an on/off ratio of 106, a subthreshold swing of 45.1 mV/dec, and low leakage current down to 10−11 A, demonstrating high performance and low-power operation.
Enabled by synergistic polarization control, it achieves high performance and boosts neural computing accuracy, offering a compact pathway to multifunctional low-power electronics.
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