Ultra-high quality factor superconducting tantalum resonators fabricated on 300 mm silicon wafers
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[Submitted on 9 Jun 2026]
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Summary
This research paper reports the fabrication of ultra-high quality factor superconducting tantalum (α-Ta) resonators on 300 mm ultra-high-resistivity intrinsic silicon wafers using industrial processes. The resonators achieved median internal quality factors exceeding 40 million and maxima above 60 million. The study identifies a dominant interface loss mechanism and places conservative upper bounds on substrate-associated dissipation, with the best-performing substrate showing a loss tangent below 1.0 × 10⁻⁸. The findings establish industrial 300 mm processing and MCZ silicon as a promising platform for superconducting quantum architectures requiring ultra-high quality factors.
Key quotes
· 3 pulledHere we report planar α-Ta resonators fabricated on 300 mm ultra-high-resistivity (>10 kΩ cm) intrinsic silicon using industrial processes, achieving median internal Q factors exceeding 40 million and maxima above 60 million.
For the best-performing substrate, the inferred substrate loss tangent is below 1.0 × 10⁻⁸, establishing industrial MCZ silicon among the lowest-loss substrate platforms reported for superconducting resonators.
More broadly, these studies establish industrial 300 mm processing, careful interface engineering, and 300 mm MCZ silicon substrates as a promising platform for resonator-heavy superconducting quantum architectures with ultra-high quality factors.
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