Scaling nanoribbon transistors with monolayer transition metal dichalcogenides
10d ago
Nature Nanotechnology, Published online: 02 June 2026; doi:10.1038/s41565-026-02161-wMonolayer TMD nanoribbon transistors using anchored contacts and multipatterning achieve high on-state currents down to 25 nm widths, positioning them as key building blocks for future gate-all-around nanosheet electronics.
You might also wanna read
Atomically precise carbon structure fabrication demonstrated using inverted-mode STM mechanosynthesis
Researchers demonstrate atomically precise mechanosynthesis of carbon structures on a hydrogen-passivated Si(100) surface using inverted-mod
447 TB/cm² at zero retention energy – atomic-scale memory on fluorographane
zenodo.org·2mo ago
Power-over-Skin: Full-Body Wearables Powered by Intra-Body RF Energy (2024)
dl.acm.org·7mo ago
Chinese Researchers Develop Analog Chip Claimed to Be 1,000 Times Faster Than Nvidia GPUs for Specific Applications
Chinese researchers from Peking University have developed a new analog chip using resistive random-access memory (RRAM) technology that repo

Stanford's Diamond Thermal Conductivity Breakthrough for Advanced Chip Cooling
The article discusses the critical challenge of heat management in modern computing as transistors become smaller and more densely packed. I
spectrum.ieee.org·7mo agoMemory Manufacturers Shift Focus from Smartphones to Hyperscalers, Threatening 2026 Device Markets
The article analyzes a global memory shortage crisis driven by a fundamental shift in semiconductor manufacturing priorities. Rather than a
