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Scaling nanoribbon transistors with monolayer transition metal dichalcogenides

10d ago
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Nature Nanotechnology, Published online: 02 June 2026; doi:10.1038/s41565-026-02161-wMonolayer TMD nanoribbon transistors using anchored contacts and multipatterning achieve high on-state currents down to 25 nm widths, positioning them as key building blocks for future gate-all-around nanosheet electronics.

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