Imec fabricates first quantum dot qubit device using High-NA EUV lithography
By
Pat Brans
The bagel they save for the regulars. Don't skim, savour.
Summary
At ITF World 2026, imec demonstrated the world's first quantum dot qubit device fabricated using High-NA EUV lithography, a cutting-edge semiconductor manufacturing tool. The device features silicon quantum dot spin qubits with control gate gaps of approximately 6 nm—only a few dozen silicon atoms wide. This breakthrough aims to improve qubit coupling and control while moving silicon spin qubits closer to scalable, manufacturable quantum computing systems.
Key quotes
· 3 pulledImec unveiled what it describes as the world's first quantum dot qubit device fabricated using High-NA EUV lithography
The demonstration used High-NA EUV lithography to fabricate silicon quantum dot spin qubits with gaps of approximately 6 nm between control gates
Imec believes the tighter spacing improves qubit coupling and control while also pushing the devices closer to scalable semiconductor
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